JPH0548642B2 - - Google Patents

Info

Publication number
JPH0548642B2
JPH0548642B2 JP6629484A JP6629484A JPH0548642B2 JP H0548642 B2 JPH0548642 B2 JP H0548642B2 JP 6629484 A JP6629484 A JP 6629484A JP 6629484 A JP6629484 A JP 6629484A JP H0548642 B2 JPH0548642 B2 JP H0548642B2
Authority
JP
Japan
Prior art keywords
thin film
single crystal
piezoelectric
silicon
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP6629484A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60210018A (ja
Inventor
Yoichi Myasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6629484A priority Critical patent/JPS60210018A/ja
Publication of JPS60210018A publication Critical patent/JPS60210018A/ja
Publication of JPH0548642B2 publication Critical patent/JPH0548642B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP6629484A 1984-04-03 1984-04-03 薄膜圧電振動子 Granted JPS60210018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6629484A JPS60210018A (ja) 1984-04-03 1984-04-03 薄膜圧電振動子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6629484A JPS60210018A (ja) 1984-04-03 1984-04-03 薄膜圧電振動子

Publications (2)

Publication Number Publication Date
JPS60210018A JPS60210018A (ja) 1985-10-22
JPH0548642B2 true JPH0548642B2 (en]) 1993-07-22

Family

ID=13311654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6629484A Granted JPS60210018A (ja) 1984-04-03 1984-04-03 薄膜圧電振動子

Country Status (1)

Country Link
JP (1) JPS60210018A (en])

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69124339T2 (de) * 1990-05-25 1997-05-15 Toyo Communication Equip Elektroden- und elektrodenleitungsstruktur eines piezoelektrischen resonators aus einer ultradünnen schicht
US6349454B1 (en) * 1999-07-29 2002-02-26 Agere Systems Guardian Corp. Method of making thin film resonator apparatus
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
EP1290733A1 (en) 2000-05-31 2003-03-12 Motorola, Inc. Semiconductor device and method for manufacturing the same
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) * 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
JP2002374145A (ja) * 2001-06-15 2002-12-26 Ube Electronics Ltd 圧電薄膜共振子
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices

Also Published As

Publication number Publication date
JPS60210018A (ja) 1985-10-22

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